These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for high efficiency switching DC/DC converters.
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• -6.0A, -250V, RDS(on) = 0.62Ω @VGS = -10 V• Low gate charge ( typical 29 nC)• Low Crss ( typical 27 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capability
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| Symbol |
Parameter |
FQP9P25 |
Units |
| VDSS |
Drain-Source Voltage |
-250 |
V |
| ID |
Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C) |
-6.0 |
A |
| -3.9 |
A |
| IDM |
Drain Current - Pulsed (Note 1) |
-24 |
A |
| VGSS |
Gate-Source Voltage |
± 30 |
V |
| EAS |
Single Pulsed Avalanche Energy (Note 2) |
650 |
mJ |
| IAR |
Avalanche Current (Note 1) |
-6.0 |
A |
| EAR |
Repetitive Avalanche Energy (Note 1) |
5.0 |
mJ |
| dv/dt |
Peak Diode Recovery dv/dt (Note 3) |
-5.5 |
V/ns |
| PD |
Power Dissipation (TC = 25)
- Derate above 25 |
50
|
W |
| 0.4 |
W/ |
| TJ, TSTG |
Operating and Storage Temperature Range |
-55 to +150 |
|
| TL |
Maximum lead temperature for soldering purposes,
1/8' from case for 5 seconds |
300 |
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Post a Buying Lead
Required Field 
